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| DMMT5401 MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features NEW PRODUCT * * * * * * * * * * * * * * * * Epitaxial Planar Die Construction Complementary NPN Type Available (DMMT5551) Ideal for Medium Power Amplification and Switching Intrinsically Matched PNP Pair (Note 1) 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT) 1% Matched Tolerance, Available (Note 2) Also Available in Lead Free Version A E1 E2 C2 SOT-26 Dim BC Min 0.35 1.50 2.70 3/4 3/4 2.90 1.00 0.35 0.10 0 Max 0.50 1.70 3.00 3/4 3/4 3.10 1.30 0.55 0.20 8 Typ 0.38 1.60 2.80 0.95 0.55 3.00 0.05 1.10 0.40 0.15 3/4 A B C D F M C1 B1 B2 H K Mechanical Data Case: SOT-26, Molded Plastic Case Material - UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): K4S Order & Date Code Information: See Page 2 Weight: 0.006 grams (approx.) Also Available in Lead Free Plating (Matte Tin Finish). Please see Ordering Information, Note 8, on Page 2 J D F L H J K L M 0.013 0.10 E1 E2 C2 a All Dimensions in mm C1 B1 B2 Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG DMMT5401 -160 -150 -5.0 -200 300 417 -55 to +150 Unit V V V mA mW K/W C Characteristic Collector Current - Continuous (Note 3) Power Dissipation (Note 3, 4) Thermal Resistance, Junction to Ambient (Note 3) Operating and Storage and Temperature Range Notes: 1. Built with adjacent die from a single wafer. 2. Contact the Diodes, Inc. Sales department. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 4. Maximum combined dissipation. DS30437 Rev. 1 - 2 1 of 3 www.diodes.com DMMT5401 a Diodes Incorporated Electrical Characteristics @ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min -160 -150 -5.0 3/4 3/4 50 60 50 3/4 3/4 3/4 40 100 3/4 Max 3/4 3/4 3/4 -50 -50 3/4 240 3/4 -0.2 -0.5 -1.0 Unit V V V nA mA nA Test Condition IC = -100mA, IE = 0 IC = -1.0mA, IB = 0 IE = -10mA, IC = 0 VCB = -120V, IE = 0 VCB = -120V, IE = 0, TA = 100C VEB = -3.0V, IC = 0 IC = -1.0mA, VCE = -5.0V IC = -10mA, VCE = -5.0V IC = -50mA, VCE = -5.0V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA VCB = -10V, f = 1.0MHz, IE = 0 VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -10mA, f = 100MHz VCE = -5.0V, IC = -200mA, RS = 10W, f = 1.0kHz NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 5) DC Current Gain (Note 6) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Small Signal Current Gain Current Gain-Bandwidth Product Noise Figure hFE VCE(SAT) VBE(SAT) 3/4 V V Cobo hfe fT NF 6.0 200 300 8.0 pF 3/4 MHz dB Ordering Information Device DMMT5401-7 Notes: (Note 7) Packaging SOT-26 Shipping 3000/Tape & Reel 5. Short duration test pulse used to minimize self-heating effect. 6. The DC Current Gain, hFE, (matched at IC = -10mA and VCE = -5V) Collector Emitter Saturation Voltage, VCE(SAT), and Base Emitter Saturation Voltage, VBE(SAT) are matched with typical matched tolerances of 1% and maximum of 2%. 7. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 8. For Lead Free version (with Lead Free terminal finish) part number, please add "-F" suffix to part number above. Example: DMMT5401-7-F. Marking Information K4S K4S = Product Type Marking Code YM = Date Code Marking Y = Year ex: P = 2003 M = Month ex: 9 = September Date Code Key Year Code Month Code Jan 1 Feb 2 March 3 Apr 4 May 5 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30437 Rev. 1 - 2 2 of 3 www.diodes.com YM DMMT5401 10.0 NEW PRODUCT 350 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) IC = 10 IB PD, POWER DISSIPATION (mW) 1.0 TA = 150C 0.1 TA = -50C TA = 25C 0.01 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current 10,000 hFE, DC CURRENT GAIN (NORMALIZED) 1.0 VBE(ON), BASE EMITTER VOLTAGE (V) VCE = 5V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 VCE = 5V TA = -50C 1000 TA = 150C TA = 25C 100 TA = 25C 10 TA = -50C TA = 150C 1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs. Collector Current 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current 1000 ft, GAIN BANDWIDTH PRODUCT (MHz) VCE = 10V 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs Collector Current DS30437 Rev. 1 - 2 3 of 3 www.diodes.com DMMT5401 |
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